Carrier dynamics in InGaN/GaN multiple quantum well structures
Journal
Proceedings of SPIE - The International Society for Optical Engineering
Journal Volume
4594
Pages
197-200
Date Issued
2001
Author(s)
Feng, S.-W.
Cheng, Y.-C.
Chung, Y.-Y.
Mao, M.-H.
Yang, C.-C.
Lin, Y.-S.
Ma, K.-J.
Chyi, J.-I.
Abstract
We report the fast and slow decay lifetimes of multi- component photoluminescence (PL) intensity decays in the time-resolved photoluminescence measurements at the room temperature and a low temperature. The fast decay component was essentially due to carrier dynamics, that is, carrier flow between strongly localized and weakly localized states. Such a carrier relaxation process results in extremely long PL decay time for strongly localized states at the low temperature. At room temperature, because of thermal energy and hence carrier escape form strongly localized states, effective lifetimes becomes stronger.
SDGs
Type
journal article