Transport properties of two-dimensional electron gases containing linear ordering InAs self-assembled quantum dots
Journal
Applied Physics Letters
Journal Volume
78
Journal Issue
24
Pages
3896-3898
Date Issued
2001
Author(s)
Abstract
We present a study of the anisotropic properties of two-dimensional electron gases formed in GaAs/AlGaAs heterostructures in which InAs self-assembled quantum dots have been inserted into the center of a GaAs quantum well. We observe an anisotropic mobility for the orthogonal [1̄10] and [110] directions. The mobility in the [1̄10] direction was found to be up to approximately twice that in the [110] direction. It is suggested that the interface roughness scattering due to the inserted InAs material could be a cause for the large anisotropies in mobility.
Type
journal article