Spin-dependent transport in a dilute two-dimensional GaAs electron gas in a parallel magnetic field
Journal
Physical Review B - Condensed Matter and Materials Physics
Journal Volume
64
Journal Issue
23
Pages
2333191-2333193
Date Issued
2001
Author(s)
Smith, C.G.
Simmons, M.Y.
Ritchie, D.A.
Cheng, Y.-M.
Huang, T.-Y.
Pao, C.H.
Lee, C.-C.
Pepper, M.
Kim, G.-H.
Leem, J.Y.
Abstract
We report low-temperature magnetoresistivity measurements of high-quality gated two-dimensional (2D) electron systems. In the dilute electron density limit, we show evidence for spin polarisation in an in-plane magnetic field. Using a simple model, we estimate the Landé g-factor in this dilute two-dimensional electron gas to be about 3.32. The enhanced Landé g-factor compared with that of a bulk GaAs 2D electron system (0.44) is ascribed to electron-electron interaction effects at ultra-low electron densities. © 2002 Elsevier Science B.V. All rights reserved.
Subjects
g-factor; Parallel magnetic field; Spin
Other Subjects
Carrier concentration; Electron transport properties; Magnetic field effects; Magnetoresistance; Semiconducting gallium arsenide; Parallel magnetic fields; Electron gas
Type
journal article