Method of determining potential barrier heights at submonolayer AlAs/GaAs heterointerfaces
Journal
Physical Review B - Condensed Matter and Materials Physics
Journal Volume
64
Journal Issue
16
Pages
1653131-1653135
Date Issued
2001
Author(s)
Abstract
We report low-field magnetoresistance measurements of a two-dimensional electron gas formed in a GaAs quantum well, in which half a monolayer of A1As has been inserted into the center of the well. A large anisotropy is observed in both the mobility and the low field magnetoresistance in the orthogonal [110] and [110] directions. We describe a method of using the anisotropic low field magnetoresistance to calculate the magnitude of the effective potential of the AlAs submonolayer at the GaAs/AlGaAs heterointerface.
Type
journal article