https://scholars.lib.ntu.edu.tw/handle/123456789/293523
標題: | Correlation between defect concentration and carrier lifetime of GaAs grown by molecular beam epitaxy at different temperatures | 作者: | Liu, T.-A. Pan, C.-L. GONG-RU LIN |
關鍵字: | Carrier lifetime; Defect; LT-GaAs; MBE; Photo-reflectivity; Pump-probe; Ultrafast | 公開日期: | 2001 | 卷: | 40 | 期: | 11 | 起(迄)頁: | 6239-6242 | 來源出版物: | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 摘要: | A pump-probe study of GaAs grown by molecular beam epitaxy at low temperatures (LT-GaAs) is performed. Ultrashort carrier lifetimes of the as-grown LT-GaAs increase from <0.13 ps (measurement limitation) to 1.8±0.2 ps as the growth temperature is increased from 200°C to 320°C. The carrier lifetime was found to be approximately inversely proportional to the antisite defect concentration. This trend is found to be in reasonably good agreement with the Schokley-Read-Hall model. The decreasing trend in the amplitudes of continuous-wave and transient reflectivities (ΔR/R) as a function of the growth temperature for the LT-GaAs is explained as an induced absorption caused by dense arsenic antisite defects. The sign of the transient ΔR/R reversed for LT-GaAs grown at 200°C. This is tentatively attributed to the band gap renormalization effect. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0036155401&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/293523 |
ISSN: | 00214922 | DOI: | 10.1143/jjap.40.6239 | SDG/關鍵字: | Carrier concentration; Carrier mobility; Energy gap; Hot carriers; Low temperature operations; Mathematical models; Molecular beam epitaxy; Optical properties; Point defects; Solid state lasers; Spectroscopy; Ultrafast phenomena; Band gap renormalization effect; Carrier lifetime; Defect concentration; Dense arsenic antisite defect; Low temperature gallium arsenide; Optical reflectivity spectroscopy; Pump-probe; Shockley-Read-Hall model; Time resolved photoreflectivity; Semiconducting gallium arsenide |
顯示於: | 光電工程學研究所 |
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