https://scholars.lib.ntu.edu.tw/handle/123456789/293628| Title: | Effect of recombination lifetime and velocity saturation on Ge profile design for the base transit time of Si/SiGe HBTs | Authors: | Chang, S.T. CHEE-WEE LIU Liu, C.W. Lu, S.C. |
Issue Date: | 2001 | Start page/Pages: | 490-493 | Source: | 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-84961801685&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/293628 |
DOI: | 10.1109/ISDRS.2001.984553 |
| Appears in Collections: | 電機工程學系 |
| File | Description | Size | Format | |
|---|---|---|---|---|
| 00984553.pdf | 199.56 kB | Adobe PDF | View/Open |
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