Effect of recombination lifetime and velocity saturation on Ge profile design for the base transit time of Si/SiGe HBTs

Resource

Semiconductor Device Research Symposium, 2001 International

Journal

2001 International Semiconductor Device Research Symposium, ISDRS 2001

Pages

490-493

Date Issued

2001

Author(s)

Chang, S.T.

Liu, C.W.

Lu, S.C.

DOI

URI

Type

conference paper

File(s)

Name

00984553.pdf

Size

199.56 KB

Format

Adobe PDF

Checksum

(MD5):9aa6462a9430adcb7aa5a1e8a41d3bda