Temperature-stable (wavelength ∼ 1μm) InAs/GaAs quantum dot light-emitting diode
Resource
Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on
Journal
IEEE Conference on Nanotechnology
Journal Volume
2001-January
Pages
421-424
Date Issued
2001
Author(s)
Abstract
The InAs/GaAs quantum dot (QD) edge light emitting diode (LED) emitting at a wavelength of 1 /spl mu/m has been fabricated which exhibits very small wavelength shift of 0.22 nm/K and the full width at half maximum (FWHM) broadening shift of 0.04 nm/K. Detailed temperature characteristics over a range from 20 to 300 K are presented.
SDGs
Type
conference paper
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