https://scholars.lib.ntu.edu.tw/handle/123456789/296542
Title: | Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb multiple quantum wells induced by interface chemical bonds | Authors: | Chiu, Y.S. Ya, M.H. Su, W.S. Chen, T.T. HAO-HSIUNG LIN YANG-FANG CHEN |
Issue Date: | 2002 | Journal Volume: | 81 | Journal Issue: | 26 | Start page/Pages: | 4943-4945 | Source: | Applied Physics Letters | Abstract: | The anisotropic properties of type-II GaAs/GaAsSb heterostructures were studied using photoluminescence (PL) and photoconductivity (PC). It was demonstrated that the polarization does not depend on the excitation intensity as well as temperature, which excludes any extrinsic mechanisms related to the in-plane anisotropy. The observed polarized optical properties of GaAsSb/GaAs multiple quantum wells were attributed to the orientation of the inherent chemical bonds at heterointerfaces. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0037164857&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/296542 |
DOI: | 10.1063/1.1532108 | SDG/Keyword: | Anisotropy; Chemical bonds; Heterojunctions; Photoconductivity; Photoluminescence; Polarization; Semiconducting gallium arsenide; Giant polarized photoluminescence; Semiconductor quantum wells |
Appears in Collections: | 物理學系 |
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