Ultralow leakage characteristics of ultrathin gate oxides (∼3 nm) prepared by anodization followed by high-temperature annealing
Journal
IEEE Transactions on Electron Devices
Journal Volume
49
Journal Issue
1
Pages
179-181
Date Issued
2002
Author(s)
Abstract
The leakage current of an anodic oxide (ANO) is two orders lower than that of a rapid thermal oxide (RTO) due to the negative oxide trapped charges near the metal-ANO interface. Moreover, the ANO's SILC characteristic is different from the RTO's, since the charges might redistribute under a high electrical stress.
SDGs
Type
journal article