https://scholars.lib.ntu.edu.tw/handle/123456789/296935
標題: | Local thinning-induced oxide nonuniformity effect on the tunneling current of ultrathin gate oxide | 作者: | Hong, C.-C. Chen, W.-R. JENN-GWO HWU |
關鍵字: | Composed capacitor; Local thinning; Metal-oxide-semiconductor (MOS); Oxide thickness nonuniformity; Tunneling current | 公開日期: | 2002 | 卷: | 41 | 期: | 1 | 起(迄)頁: | 1-4 | 來源出版物: | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 摘要: | The significance of the oxide thickness nonuniformity effect on the current density-voltage (J-V) characteristics of gate oxide in an ultrathin region is demonstrated. Theoretical J-V curves of metal-oxide-semiconductor (MOS) under small and large biases were derived according to the existing literature, and were used to study the J-V characteristics of an MOS capacitor containing different local oxide thicknesses was studied. An effect we called "local thinning", which stretches out the J-V curves, was observed. The magnitude of the tunneling current is governed by the thinner oxide region in the capacitor although this region only occupies a relative small area ratio. Experiments were performed on intentional etching of silicon wafers to reinforce the oxide thickness nonuniformity effect. The experimental results are explainable by the model observation. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036309905&doi=10.1143%2fJJAP.41.1&partnerID=40&md5=116626aa68ee053a51dd1997d6319796 http://scholars.lib.ntu.edu.tw/handle/123456789/296935 |
DOI: | 10.1143/JJAP.41.1 | SDG/關鍵字: | Current voltage characteristics; Electron tunneling; Etching; Silicon wafers; Tunneling current; MOS capacitors |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。