https://scholars.lib.ntu.edu.tw/handle/123456789/296942
標題: | Effect of starting oxide on electrical characteristics of metal-reoxidized nitrided oxide-semiconductor devices prepared by rapid thermal processes | 作者: | Chang-Liao, Kuei-Shu JENN-GWO HWU |
關鍵字: | Rapid thermal process; Reoxidized nitrided oxide | 公開日期: | 1992 | 卷: | 31 | 期: | 5 B | 來源出版物: | Japanese Journal of Applied Physics, Part 2: Letters | 摘要: | The electrical characteristics of metal-reoxidized nitrided oxide (RNO)-semiconductor devices which employ furnace oxide (OF) and rapid thermal oxide (OR) as starting oxides are investigated. It is found that the RNO structure which uses OF as a starting oxide and with nitridation carried out at a sufficiently high temperature, exhibits the lowest initial interface traps in comparison with other RNO structures. Metal-oxide-semiconductor (MOS) devices which use pure OR as a gate oxide are worthy of note due to their good hot-electron and radiation hardnesses. The gate-area dependence of radiation hardness for various structures is also discussed. © 1992 IOP Publishing Ltd. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0026868251&doi=10.1143%2fJJAP.31.L600&partnerID=40&md5=8cfb803452c2acfde16289ef9356446f http://scholars.lib.ntu.edu.tw/handle/123456789/296942 |
DOI: | 10.1143/JJAP.31.L600 | SDG/關鍵字: | Oxides - Applications; Oxides - Interfaces; Oxides - Thermal Effects; Rapid Thermal Process; Reoxidized Nitrided Oxide; Semiconductor Devices |
顯示於: | 電機工程學系 |
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