https://scholars.lib.ntu.edu.tw/handle/123456789/299543
Title: | An Optimized Gate Oxide Breakdown Test by Activating Oxide Traps at Low Fields | Authors: | RUEY-SHAN GUO | Issue Date: | Dec-1992 | Source: | International Electron Device Meeting | URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/299543 | DOI: | 10.1109/iedm.1992.307328 |
Appears in Collections: | 工商管理學系 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.