Interface energy of Au7Si grown in the interfacial layer of truncated hexagonal dipyramidal Au nanoislands on polycrystalline-silicon
Journal
Applied Physics Letters
Journal Volume
82
Journal Issue
25
Pages
4468-4470
Date Issued
2003
Author(s)
Abstract
The growth of truncated hexagonal dipyramidal Au nanoislands with the formation of a metastable Au7Si layer on polycrystalline silicon was demonstrated. Oxygen was found to inhibit the outdiffusion of Si, leading to a diffusion-limited growth of the metastable Au7Si phase with reduced Si content at the interface. Contact angle measurements were used to calculate the interfacial energies involved in the epitaxial growth of Au on Au7Si.
SDGs
Type
journal article