Dielectric properties of CdxZn1-xTe epilayers
Journal
Journal of Applied Physics
Journal Volume
94
Journal Issue
5
Pages
3371-3375
Date Issued
2003
Author(s)
Abstract
We report on the dielectric properties of CdxZn1−xTe (0.056⩽x⩽0.582) epilayers studied by capacitance and dissipation factor measurements at temperature 201 K<T<460 K and frequency 20 Hz<f<1 MHz. A Debye-like relaxation in the dielectric response has been observed, which is explained in terms of the presence of charge redistribution. The relaxation is found to be a thermally activated process, and the activation energies obtained from both dissipation factor and capacitance are in good agreement. It is also found that the activation energy decreases with increasing Cd content and this behavior is interpreted in terms of the four-center model, in which the number of Cd atoms appearing in the nearest-neighbor sites of a defect can have four possible configurations. In addition, we demonstrate that the transport mechanism of the carrier conduction in CdZnTe epilayers can be well described by the correlated barrier hopping model.
SDGs
Type
journal article