Using anodization to oxidize ultrathin aluminum film for high-k gate dielectric application

Journal

Journal of the Electrochemical Society

Journal Volume

150

Journal Issue

7

Date Issued

2003

Author(s)

DOI

10.1149/1.1577545

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-0038783313&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/301811

Type

journal article