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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Using anodization to oxidize ultrathin aluminum film for high-k gate dielectric application
Details
Using anodization to oxidize ultrathin aluminum film for high-k gate dielectric application
Journal
Journal of the Electrochemical Society
Journal Volume
150
Journal Issue
7
Date Issued
2003
Author(s)
JENN-GWO HWU
DOI
10.1149/1.1577545
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-0038783313&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/301811
Type
journal article