Thickness-dependent stress effect in p-type metal-oxide-semiconductor structure investigated by substrate injection current
Journal
Applied Physics Letters
Journal Volume
82
Journal Issue
22
Pages
3916-3918
Date Issued
2003
Author(s)
Abstract
The effects of oxide, Si wafer, and gate Al thicknesses on the substrate injection currents (Jsub) of p-type metal–oxide–semiconductor structures with ultrathin oxides are studied. Jsub is reported to be both trap-related (interface and Si bulk) and Si band gap-related (intrinsic carrier concentration). Both mechanisms have given rise to the stress near the Si/SiO2 interface. Current–voltage and capacitance–voltage characterizations reveal that Jsub increases with oxide thickness, which is suggested to be dominated by the trap-related mechanism. A stronger dependence of Jsub on a change in oxide thickness is observed for a thicker Si wafer, which is proposed to be mainly caused by the band gap-related mechanism. Furthermore, a thicker gate Al introduces a higher Jsub, which is proposed to be due to both the trap-related and the band gap-related mechanisms.
Type
journal article