Quantum-well thickness dependence of stimulated emission in InGaN/GaN structures
Journal
Physica Status Solidi C: Conferences
Journal Issue
7
Pages
2610-2613
Date Issued
2003
Author(s)
Jur??nas, S.
Miasojedovas, S.
Kuril?ik, G.
?ukauskas, A.
Feng, Shih-Wei
Cheng, Yung-Chen
Yang, C.C.
Kuo, Cheng-Ta
Tsang, Jian-Shihn
Abstract
Room-temperature lateral emission in In0.15Ga0.85N/GaN multiple quantum wells (MQWs) of various well thicknesses has been studied by means of excitation-density and time-resolved photoluminescence spectroscopy. The lowest threshold of stimulated emission and the highest emission efficiency has been observed in the structures with the well thickness d = 3 nm. The existence of an optimal well thickness is attributed to enhanced nonradiative recombination for thinner wells and to larger-well-width–invoked indium segregation that results in broadening of the local-state distribution. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Type
conference paper