https://scholars.lib.ntu.edu.tw/handle/123456789/302053
標題: | Effects of thermal annealing on InGaN/GaN quantum well structures with silicon doping | 作者: | Cheng, Yung-Chen Lin, En-Chiang Feng, Shih-Wei Wang, Hsiang-Chen CHIH-CHUNG YANG Ma, Kung-Jen Shi, Shih-Chen LI-CHYONG CHEN Pan, Chang-Chi Chyi, Jen-Inn |
公開日期: | 2003 | 卷: | 1 | 來源出版物: | Pacific Rim Conference on Lasers and Electro-Optics, CLEO | 摘要: | The effects of thermal annealing on the optical properties and material structures of InGaN/GaN quantum wells with silicon doping were studied to find that the material microstructures alternation was the major reason for the changes. © 2003 IEEE. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-84955075952&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/302053 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84955075952&doi=10.1109%2fCLEOPR.2003.1274504&partnerID=40&md5=e885c0e1de51d2a7814905411cd15581 |
DOI: | 10.1109/CLEOPR.2003.1274504 | SDG/關鍵字: | Nanostructures; Optical properties; Photonics; Quantum well lasers; InGaN/GaN quantum well; Material microstructures; Properties and materials; Silicon doping; Thermal-annealing; Semiconductor quantum wells |
顯示於: | 電機工程學系 |
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01274504.pdf | 84.93 kB | Adobe PDF | 檢視/開啟 |
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