Millimeter-wave MMIC single-pole-double-throw passive HEMT switches using impedance-transformation networks
Journal
IEEE Transactions on Microwave Theory and Techniques
Journal Volume
51
Journal Issue
4 I
Pages
1076-1085
Date Issued
2003
Author(s)
Abstract
This paper proposes a new design method for passive FET switches in the millimeter-wave (MMW) regime. In contrast to the conventional resonant-type switch design method, this passive FET switch circuit utilizes impedance transformation to compensate the drain-source capacitance effect for the off state at high frequencies. By means of this new design concept, a Q- and V-band monolithic-microwave integrated-circuit single-pole double-throw (SPDT) switches using a GaAs pseudomorphic high electron-mobility-transistor process are demonstrated. The Q-band SPDT switch has a measured isolation better than 30 dB for the off state and 2-dB insertion loss for the on state from 38 to 45 GHz, while the V-band switch also shows a measured isolation better than 30 dB for the off state and 4-dB insertion loss for the on state from 53 to 61 GHz. The obtained isolation performance using this design approach outmatches previously published FET switches in the MMW frequency range.
SDGs
Type
journal article