https://scholars.lib.ntu.edu.tw/handle/123456789/307541| Title: | Ultrathin aluminum oxide gate dielectric on N-type 4H-SiC prepared by low thermal budget nitric acid oxidation | Authors: | JENN-GWO HWU | Issue Date: | 2004 | Journal Volume: | 51 | Journal Issue: | 11 | Start page/Pages: | 1877-1882 | Source: | IEEE Transactions on Electron Devices | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-8144227222&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/307541 |
DOI: | 10.1109/TED.2004.837376 |
| Appears in Collections: | 電機工程學系 |
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