Quality improvement of ultrathin gate oxide by using thermal growth followed by SF ANO technique

Journal

IEEE Electron Device Letters

Journal Volume

25

Journal Issue

10

Pages

687-689

Date Issued

2004

Author(s)

DOI

10.1109/LED.2004.836031

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-5044240747&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/307543

Type

journal article