https://scholars.lib.ntu.edu.tw/handle/123456789/307544
標題: | Quality improvement in LPCVD silicon nitrides by anodic and rapid thermal oxidations | 作者: | JENN-GWO HWU | 公開日期: | 2004 | 卷: | 7 | 期: | 5 | 來源出版物: | Electrochemical and Solid-State Letters | 摘要: | Low-pressure chemical vapor deposition (LPCVD) Si3N4 quality presents a dramatic improvement after oxidation. Both liquid-phase anodic oxidation and rapid thermal oxidation were studied in this work. After oxidation, "SiO2"-like layers grown on the surface, and oxygen incorporated into the Si3N4 layer were observed. The nonstoichiometric bonding, i.e., Si2=N, Si dangling bonds, and crystalline Si were oxidized into Si2=N-O or SiO2, and the stoichiometric Si3≡N bonding maintained a higher-k property. In addition, more oxygen replacement of the imperfect Si-N bonds after anodic oxidation contributed to better improvement in suppressing gate leakage current. © 2004 The Electrochemical Society. All rights reserved. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-2342462246&doi=10.1149%2f1.1664053&partnerID=40&md5=541c2c8e0fc1aacdc4d73ce203d86293 http://scholars.lib.ntu.edu.tw/handle/123456789/307544 |
DOI: | 10.1149/1.1664053 | SDG/關鍵字: | Chemical vapor deposition; Leakage currents; Mass spectrometry; MOS devices; Oxidation; Probability; Quantum theory; X ray photoelectron spectroscopy; Dangling bonds; Deionized (DI) water; Nitride films; Thermal oxidation; Silicon nitride |
顯示於: | 電機工程學系 |
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