https://scholars.lib.ntu.edu.tw/handle/123456789/307547
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | JENN-GWO HWU | en |
dc.creator | Shih, Y.-H. and Lin, S.-R. and Wang, T.-M. and Hwu, J.-G. | - |
dc.date.accessioned | 2018-09-10T04:48:50Z | - |
dc.date.available | 2018-09-10T04:48:50Z | - |
dc.date.issued | 2004 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-4444254154&doi=10.1109%2fTED.2004.833571&partnerID=40&md5=83396319418c520c402809144ca6e002 | - |
dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/307547 | - |
dc.description.abstract | This paper examined the feasibility of applying a highly sensitive metal-oxide-semiconductor (MOS) tunneling temperature sensor, which was compatible with current CMOS technology. As the sensor was biased positively at a constant voltage, the gate current increased more than when the sensor was biased at a constant-current situation, its gate voltage magnitude changed significantly with substrate temperature, with a sensitivity exceeding -2 V/ °C. The improvement of temperature sensitivity in this paper is one thousand times over the sensitivity of a conventional p-n junction, i.e., namely, about -2 mV/ °C. Regarding a temperature sensor array, this paper proposes a method using gate current gain, rather than absolute gate current, to eliminate the gate current discrepancy among sensors. For constant current operation, a sensitivity exceeding 10 V/ °C can be obtained if the current level is suitable. Finally, this paper demonstrates a real temperature distribution for on-chip detection. With such a high temperature-sensitive sensor, accurate temperature detection can be incorporated into common CMOS circuits. © 2004 IEEE. | - |
dc.language | en | en |
dc.relation.ispartof | IEEE Transactions on Electron Devices | en_US |
dc.source | AH | - |
dc.subject.other | Gate current; Temperature detection; Temperature sensitivity; Temperature sensor array; Tunneling temperature sensors; Arrays; CMOS integrated circuits; Electric currents; Electric potential; Integrated circuit layout; Semiconductor device structures; Semiconductor junctions; Sensors; Temperature distribution; Thermal effects; Tunnel diodes; MOS devices | - |
dc.title | High sensitive and wide detecting range MOS tunneling temperature sensors for on-chip temperature detection | - |
dc.type | journal article | en |
dc.identifier.doi | 10.1109/TED.2004.833571 | - |
dc.relation.pages | 1514-1521 | - |
dc.relation.journalvolume | 51 | - |
dc.relation.journalissue | 9 | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.orcid | 0000-0001-9688-0812 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系 |
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