https://scholars.lib.ntu.edu.tw/handle/123456789/307550| Title: | Reduction of radiation-induced degradation in n-channel metal-oxide-semiconductor field-effect transistors (MOSFET's) with gate oxides prepared by repeated rapid thermal N2O annealing | Authors: | JENN-GWO HWU | Issue Date: | 1994 | Journal Volume: | 33 | Journal Issue: | 7 A | Source: | Japanese Journal of Applied Physics, Part 2: Letters | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0028462230&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/307550 |
DOI: | 10.1143/JJAP.33.L916 |
| Appears in Collections: | 電機工程學系 |
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