https://scholars.lib.ntu.edu.tw/handle/123456789/307550
標題: | Reduction of radiation-induced degradation in n-channel metal-oxide-semiconductor field-effect transistors (MOSFET's) with gate oxides prepared by repeated rapid thermal N2O annealing | 作者: | JENN-GWO HWU | 關鍵字: | Gate oxide; MOSFET; N2O annealing; Radiation hardness; Rapid thermal annealing | 公開日期: | 1994 | 卷: | 33 | 期: | 7 A | 來源出版物: | Japanese Journal of Applied Physics, Part 2: Letters | 摘要: | Repeated rapid thermal N2O annealing is proposed as a new gate oxide preparation method for n-channel metal- oxide-semiconductor field-effect transistors (n-MOSFET’s). It is found that the n-MOSFET’s with gate oxide prepared by this method exhibit higher field-effect mobility and better radiation hardness when compared with those with fresh and the conventional one-time N2O -annealed gate oxides. © 1994 IOP Publishing Ltd. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0028462230&doi=10.1143%2fJJAP.33.L916&partnerID=40&md5=a07c1c86bab1a9e49c31bde76e8d0fe2 | DOI: | 10.1143/JJAP.33.L916 | SDG/關鍵字: | Annealing; Degradation; Diffusion; Gates (transistor); Nitrogen; Oxides; Radiation; Semiconductor growth; Field effect mobility; Gate oxide preparation; Radiation hardness; Radiation induced degradation; Rapid thermal annealing; Transconductance; MOSFET devices |
顯示於: | 電機工程學系 |
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