Improvement of Hot-Carrier and Radiation Hardnesses in Metal-Oxide-Nitride-Oxide Semiconductor Devices by Irradiation-Then-Anneal Treatments
Journal
IEEE Transactions on Electron Devices
Journal Volume
41
Journal Issue
4
Pages
612-614
Date Issued
1994
Author(s)
Abstract
The hardnesses of hot-carrier and radiation of metal-oxide nitride-oxide semiconductor (MONOS) devices can be improved by the irradiation-then-anneal (ITA) treatments. Each treatment includes an irradiation of Co-60 with a total dose of 1M rads(SiO/sub 2/) and an anneal in N/sub 2/ at 400/spl deg/C for 10 min successively. This improvement can be explained by the release of SiO/sub 2//Si interfacial strain.>
Type
journal article