https://scholars.lib.ntu.edu.tw/handle/123456789/307552
Title: | Improvement in radiation hardness of gate oxides in metal-oxide semiconductor devices by repeated rapid thermal oxidations in N2O | Authors: | JENN-GWO HWU | Issue Date: | 1994 | Journal Volume: | 64 | Journal Issue: | 23 | Start page/Pages: | 3136-3138 | Source: | Applied Physics Letters | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0348192644&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/307552 |
DOI: | 10.1063/1.111343 |
Appears in Collections: | 電機工程學系 |
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