1.3m GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy
Resource
Electronics Letters
Journal
Electronics Letters.
Journal Volume
40
Journal Issue
3
Pages
177-179
Date Issued
2004-02
Author(s)
Abstract
A highly strained GaAs/GaAs0.64Sb0.36 single quantum well laser has been grown on GaAs (100) substrate by using solid source molecular beam epitaxy. The uncoated broad-area laser demonstrates 1.292 µm pulsed operation with a low threshold current density of 300 A/cm2. The spontaneous emission of the laser was also studied. The result reveals that the Auger recombination component dominates the threshold current at high temperature.
Type
journal article
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