https://scholars.lib.ntu.edu.tw/handle/123456789/314312
標題: | A low-power Ka-band voltage-controlled oscillator implemented in 200-GHz SiGe HBT technology | 作者: | YI-JAN EMERY CHEN Jin, Zhenrong Kuo W.-M.L Lee, Jongsoo Tretiakov, Youri V. Cressler, John D. Laskar, Joy Freeman, Greg |
關鍵字: | 1/f noise; Heterojunction bipolar transistor (HBT); Ka-band; Line inductor; Low power; Microstrip line; Phase noise; Silicon-germanium (SiGe); Voltage-controlled oscillator (VCO) | 公開日期: | 2005 | 卷: | 53 | 期: | 5 | 起(迄)頁: | 1672-1679 | 來源出版物: | IEEE Transactions on Microwave Theory and Techniques | 摘要: | An integrated low-power low phase-noise Ka-band differential voltage-controlled oscillator (VCO) is developed in a 0.12-μm 200-GHz silicon-germanium heterojunction bipolar transistor technology. The use of line inductors instead of transmission lines is demonstrated to be feasible in LC-tuned resonators for Ka-band applications. This VCO can operate from a supply voltage of 1.6-2.5 V. A single-sideband phase noise of -99 dBc/Hz at 1-MHz offset from the carrier frequency of 33 GHz is achieved, together with a VCO figure-of-merit of -183.7 dBc/Hz. The frequency tuning constant of the VCO in the linear regime is -0.547 GHz/V. © 2005 IEEE. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-19544380422&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/314312 |
ISSN: | 00189480 | DOI: | 10.1109/TMTT.2005.847063 | SDG/關鍵字: | Electric inductors; Frequencies; Heterojunction bipolar transistors; Microstrip lines; Resonators; Semiconducting germanium; Semiconducting silicon; Spurious signal noise; Voltage control; 1/f noise; K α-band; Line inductors; Low power; Phase noise; Silicon-germanium (SiGe); Variable frequency oscillators |
顯示於: | 電子工程學研究所 |
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