https://scholars.lib.ntu.edu.tw/handle/123456789/314478| Title: | Improvement in reliability of n-MOSFETs by using rapid thermal N2O-reoxidized nitrided gate oxides | Authors: | JENN-GWO HWU | Issue Date: | 1995 | Journal Volume: | 38 | Journal Issue: | 4 | Start page/Pages: | 839-843 | Source: | Solid State Electronics | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0029292367&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/314478 |
DOI: | 10.1016/0038-1101(94)00168-F |
| Appears in Collections: | 電機工程學系 |
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