https://scholars.lib.ntu.edu.tw/handle/123456789/314478
標題: | Improvement in reliability of n-MOSFETs by using rapid thermal N2O-reoxidized nitrided gate oxides | 作者: | JENN-GWO HWU | 公開日期: | 1995 | 卷: | 38 | 期: | 4 | 起(迄)頁: | 839-843 | 來源出版物: | Solid State Electronics | 摘要: | Instead of oxygen, pure N2O gas was used as the reoxidizer for rapid thermal reoxidized nitrided oxide in this work. The performance of n-MOSFETs with this new gate dielectric is dramatically improved in both the radiation-hardness and channel-hot-carrier stress when compared with those with pure O2-grown and O2-reoxidized nitrided oxides. Higher mobility is observed for the n-MOSFETs with N2O-reoxidized nitrided oxides in both the high field and low field regions. These improvements are attributed to the additional nitridation effect during the N2O reoxidation process, which will incorporate more nitrogen at the SiO2/Si interface. © 1995. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0029292367&doi=10.1016%2f0038-1101%2894%2900168-F&partnerID=40&md5=38fdafb45fd2f06fdd5f3b75c0679552 http://scholars.lib.ntu.edu.tw/handle/123456789/314478 |
DOI: | 10.1016/0038-1101(94)00168-F | SDG/關鍵字: | Annealing; Dielectric heating; Hot carriers; Interfaces (materials); Nitrides; Nitriding; Oxides; Performance; Radiation hardening; Reliability; Semiconducting silicon; Channel hot carrier stress; Nitridation effect; Nitrided gate oxides; Rapid thermal processing system; Reoxidation; MOSFET devices |
顯示於: | 電機工程學系 |
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