Impurity-related interface trap in an Al/SiO2/Si(P) capacitor
Journal
Thin Solid Films
Journal Volume
125
Journal Issue
1-2
Pages
17-23
Date Issued
1985
Author(s)
Abstract
The trap charge at the Si(P)SiO2 interface was studied using the bias-temperature aging technique. The formation of the interface trap charge at the SiSiO2 interface is attributed to the mobile ion inside the oxide. The peak in the interface trap density distribution can be produced or eliminated by bias-temperature treatment and appears to be dependent on the preparation conditions. © 1985.
Other Subjects
CAPACITORS; ELECTRIC FIELDS; CAPACITANCE-VOLTAGE CURVES; ENERGY GAPS; INTERFACE TRAP DENSITY; SEMICONDUCTOR DEVICES, MOS
Type
journal article