https://scholars.lib.ntu.edu.tw/handle/123456789/314480
標題: | Impurity-related interface trap in an Al/SiO2/Si(P) capacitor | 作者: | JENN-GWO HWU | 公開日期: | 1985 | 卷: | 125 | 期: | 1-2 | 起(迄)頁: | 17-23 | 來源出版物: | Thin Solid Films | 摘要: | The trap charge at the Si(P)SiO2 interface was studied using the bias-temperature aging technique. The formation of the interface trap charge at the SiSiO2 interface is attributed to the mobile ion inside the oxide. The peak in the interface trap density distribution can be produced or eliminated by bias-temperature treatment and appears to be dependent on the preparation conditions. © 1985. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0021397771&doi=10.1016%2f0040-6090%2885%2990389-X&partnerID=40&md5=f612b92e4455d8ff301093794232ea2c http://scholars.lib.ntu.edu.tw/handle/123456789/314480 |
DOI: | 10.1016/0040-6090(85)90389-X | SDG/關鍵字: | CAPACITORS; ELECTRIC FIELDS; CAPACITANCE-VOLTAGE CURVES; ENERGY GAPS; INTERFACE TRAP DENSITY; SEMICONDUCTOR DEVICES, MOS |
顯示於: | 電機工程學系 |
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