https://scholars.lib.ntu.edu.tw/handle/123456789/315430
標題: | Field orientation dependence of magnetoresistance in spin-dependent tunnel junctions | 作者: | Chiang, W. C. Chang, Y. M. Ho, C. H. Yao, Y. D. MINN-TSONG LIN |
關鍵字: | Field-in-plane (FIP); Field-perpendicular-to-plane (FPP); Spin-dependent tunnel (SDT) junction; Tunneling magnetoresistance (TMR) | 公開日期: | 2005 | 卷: | 41 | 期: | 2 | 起(迄)頁: | 896-898 | 來源出版物: | IEEE Transactions on Magnetics | 摘要: | The dependence of magnetotransport on field orientation is an important issue in spintronics-related devices where the applied field is not necessarily in the ideal field-in-plane (FIP) geometry. In this study, we perform tunneling magnetoresistance (TMR) measurements on Co-Al2O3-CoFe-NiFe spin-dependent tunnel (SDT) junctions prepared at different conditions with varying field orientation ranging from FIP to field-perpendicular-to-plane (FPP). The TMR ratio decreases drastically, whereas the switching field of Co increases when the field direction is set close to FPP. Furthermore, in a situation near FPP, a peculiar TMR looping behavior is observed for one set of samples. Interface effect is thought to be related. |
URI: | http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000227134600065&KeyUID=WOS:000227134600065 http://scholars.lib.ntu.edu.tw/handle/123456789/315430 https://www.scopus.com/inward/record.uri?eid=2-s2.0-14544278813&doi=10.1109%2fTMAG.2004.842082&partnerID=40&md5=f108be9914209b225eaffccd21cbe393 |
ISSN: | 00189464 | DOI: | 10.1109/tmag.2004.842082 | SDG/關鍵字: | Electric fields; Magnetoresistance; Random access storage; Roughness measurement; Sensitivity analysis; Sputtering; Field-in-plane (FIP); Field-perpendicular-to-plane (FPP); Spin-dependent tunnel (SDT) junction; Tunnel magnetoresistance (TMR); Tunnel junctions |
顯示於: | 物理學系 |
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