https://scholars.lib.ntu.edu.tw/handle/123456789/31942
Title: | 多銦氮化銦鎵薄膜之電子傳輸特性 Electron transport in In-rich InxGa1-xN films |
Authors: | 林士凱 Lin, Shih-Kai |
Keywords: | 氮化銦鎵;InGaN | Issue Date: | 2005 | Abstract: | 本論文主要是探討多銦氮化銦鎵薄膜InxGa1-xN (x = 1, 0.98, 0.92, 0.8, 0.7) 的電子傳輸性質。我們測量了大溫度範圍下氮化銦鎵的電子 傳輸特性。我們發現在實驗誤差範圍內,樣品的載子濃度在測量的溫 度範圍內幾乎與溫度無關,這是金屬的行為。此外我們利用van der Pauw 四點量測法計算樣品的電阻率。綜合電阻率與載子濃度的數據 顯示,我們的樣品隨著鎵的成分上升,有一個由金屬到半導體的轉 變。我們也計算了樣品的載子遷移率,載子遷移率在整個量測的溫度 範圍內,隨著鎵成分的升高而降低,這也印證了氮化銦的傳輸特性優 於氮化鎵。由於金屬電阻率在低溫下遵守Bloch T5 定理,對於銦濃 度大於等於92% 的樣品,我們檢查了它們的電阻率與Bloch T5 定 理的符合程度。分析的結果顯示高銦成分的樣品的電阻率非常符合 Bloch T5 定理,從而進一步的支持了高銦濃度的氮化銦鎵薄膜傳輸特 性與金屬十分類似。 This thesis focuses on electron transport properties in InxGa1−xN (x =1, 0.98, 0.92, 0.8, 0.7) thin films. We have performed transport measurements on InxGa1−xN thin films over a wide temperature range. We observed that within experimental error, the carrier densities are temperature independent. Besides, the resistivities, combined with the carrier densities, show a tendency of transition from metal to semiconductor with increasing Ga composition. The calculated mobility shows that for metallic like samples (InxGa1−xN with x ≥0.92), the dominant scattering mechanism is the imperfection scattering over the whole temperature range. We also showed that Bloch T5 curves fit very well the resistivities of samples InxGa1−xN with x =1, 0.98, 0.92, once again supporting that very high In composition InxGa1−xN films can be considered as degenerate electron systems in which the Fermi level is much higher than conduction-band bottom over the whole measurement range. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/54465 | Other Identifiers: | en-US |
Appears in Collections: | 物理學系 |
File | Description | Size | Format | |
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ntu-94-R92222049-1.pdf | 23.53 kB | Adobe PDF | View/Open |
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