The influence of pulsed laser deposited bismuth thin films properties upon annealing
我們利用脈衝雷射蒸鍍法( Pulsed Laser Deposition PLD)，在Eagle 2000 Glass基板上成長一層鉍薄膜，雷射源是選用波長為355nm的Diode Pumped Solid -State Laser (DPSS)。我們嘗試了幾種不同的環境下去製備鉍薄膜樣品。之後我們選擇在室溫、高真空度(10-8 torr)下成長的鉍薄膜樣品放入真空腔內做高溫回火(anneal)的處理，回火的溫度為267度、時間八小時。比較在其他條件相同的情形下，高溫回火(anneal)前後對鉍薄膜性質的影響。
樣品先以X射線繞射儀(XRD)測量其晶格結構，觀察其結晶的方向性；用掃描式電子顯微鏡(SEM )觀察其表面的微觀結構；再利用van der PAUW 四點量測法測量在室溫 (300K)及低溫 (7K)下的磁阻值、載子遷移率(mobility)和載子濃度值。
Bi thin films were grown onto Eagle 2000 Glass by pulsed laser deposition (PLD). The laser source was Diode Pumped Solid-State Laser (DPSS) which wavelength was 355 nm. We tried different conditions to fabricate our Bi thin films. Later we chose Bi thin films grown at room temperature and ultra vacuum(10-8torr) to anneal in the chamber. The annealing temperature and time were 267°C and 8 hours. The properties of Bi thin films with annealing or not were investigated to find the influence of the annealing process.
Crystal structure and orientation were observed by X-ray diffraction (XRD), microstructure and the scale of the grain size were observed by scanning electron microscopy (SEM), and the magnetoresistance 、 carrier concentration and mobility at different temperature (7K and 300K) were observed by van der Pauw four points method.
|Appears in Collections:||物理學系|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.