https://scholars.lib.ntu.edu.tw/handle/123456789/32000
標題: | 氮化銦鎵/氮化鎵多重量子井結構中非輻射性缺陷之特性研究 Investigation of Nonradiative Traps in InGaN/GaN Multiple Quantum Wells |
作者: | 陳奕任 Chen, I-Jen |
關鍵字: | 氮化銦鎵;氮化鎵;量子井;螢光光譜;InGaN;GaN;quantum well;PL | 公開日期: | 2007 | 摘要: | 在這一篇論文之中,我們利用雙光源激發的螢光光譜法來研究氮化銦鎵/氮化鎵多重量子井結構中的非輻射缺陷。我們可以發現當多增加一道能量較樣品能隙小的激發光源時,樣品的螢光光譜強度會減弱百分之五十以上,同時,載子的生命週期也會由173.9奈秒減少到7.9奈秒,而減少的程度則由這道激發光強度而定,我們可以利用載子在砷化鎵缺陷能階之間的傳輸模型來解釋這個實驗結果。另外在實驗中,藉由改變這道能量較樣品能隙小的激發光源的能量,我們就可以定出缺陷能階的位置同時分析出缺陷的成因。因此,雙光源激發螢光光譜法在用來探討光學元件中的缺陷時可以說是相當有用的非破壞性檢測工具。 In this thesis, we report an investigation of two-wavelength excited photoluminescence on InGaN/GaN multiple quantum wells to study the nonradiative defects. It is found that with an addition below-gap excitation the photoluminescence intensity can be quenched by up to 50%. In addition, the decay time of localized carriers changes from 173.9 ns to 7.9 ns. The quenching ratio depends on the power of the below-gap excitation. The experimental results can be well explained in terms of the electronic transitions involving deep defect states in the GaN barrier. Based on the variation of the photon energy of the below-gap excitation, the origin of the deep trap can be identified. We point out here that two wavelength excitation spectroscopy is a powerful non-destructive tool to reveal nonradiative defects in optoelectronic devices. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/54522 | 其他識別: | en-US |
顯示於: | 物理學系 |
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ntu-96-R93222054-1.pdf | 23.53 kB | Adobe PDF | 檢視/開啟 |
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