公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2013 | A sperm testing device on a liquid crystal and polymer composite film | Lin, Y.-H.; Chu, T.-Y.; Chu, W.-L.; Tsou, Y.-S.; Chiu, Y.-P.; Lu, F.; Tsai, W.-C.; Wu, S.-T.; YA-PING CHIU | Journal of Nanomedicine and Nanotechnology | 4 | 0 | |
1987 | A Versatile new Metallo-Organic Spin-on Process for Preparing Superconducting Thin films | Gross, ME; Hong, M; Liou, S; Gallagher, PK; MINGHWEI HONG | MRS Proceedings | | | |
2010 | A15 SUPERCONDUCTORS THROUGH DIRECT SOLID-STATE PRECIPITATION: V3Ga AND N63AI | Hong, Minghwei; MINGHWEI HONG | Lawrence Berkeley National Laboratory | | | |
1980 | A15 superconductors through direct solid-state precipitation: V/sub 3/Ga and Nb/sub 3/Al | Hong, MINGHWEI; MINGHWEI HONG | | | | |
2019 | Absence of Evidence of Electrical Switching of the Antiferromagnetic Néel Vector | Chiang, C C; Huang, S Y; Qu, D; Wu, P H; SSU-YEN HUANG | Physical review letters | 105 | 100 | |
2008 | Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO 2 on In 0.53 Ga 0.47 As | Lee, KY; Lee, YJ; Chang, P; Huang, ML; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG | Applied Physics Letter | | | |
2008 | Achieving a low interfacial density of states in atomic layer deposited Al 2 O 3 on In 0.53 Ga 0.47 As | Chiu, HC; Tung, LT; Chang, YH; Lee, YJ; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2011 | Achieving a Low Interfacial Density of States with a Flat Distribution in High-$κ$ Ga2O3 (Gd2O3) Directly Deposited on Ge | Lin, Chunan; Lin, Hanchung; Chiang, Tsunghung; Chu, Reilin; Chu, Lungkun; Lin, Tsungda; Chang, Yaochung; Wang, Wei-E; Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG | Applied Physics Express | | | |
2011 | Achieving a Low Interfacial Density of States with a Flat Distribution in High-kappa Ga2O3(Gd2O3) Directly Deposited on Ge | Lin, Chunan; Lin, Hanchung; Chiang, Tsunghung; Chu, Reilin; Chu, Lungkun; Lin, Tsungda; Chang, Yaochung; Wang, Wei-E; Kwo, J.Raynien; MINGHWEI HONG | Applied Physics Express | 10 | 10 | |
2010 | Achieving high-performance Ge MOS devices using high-к gate dielectrics Ga 2 O 3 (Gd 2 O 3) of sub-nm EOT | Chu, LK; Chu, RL; Lin, CA; Lin, TD; Chiang, TH; Kwo, J; Hong, Mingyi; MINGHWEI HONG | Device Research Conference 2010 | | | |
2009 | Achieving nearly free fermi-level movement and V th engineering in Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As | Lin, TD; Wu, YD; Chang, YC; Chiang, TH; Chuang, CY; Lin, CA; Chang, WH; Chiu, HC; Tsai, W; Kwo, J; others; MINGHWEI HONG | Device Research Conference, 2009 | | | |
2011 | Achieving very high drain current of 1.23 mA/$μ$m in a 1-$μ$m-gate-length self-aligned inversion-channel MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3)/In 0.75 Ga 0.25 As MOSFET | Lin, TD; Chang, P; Wu, YD; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2015 | Ad-layers enhance graphene's performance | Chen, T.-W.; Hsieh, Y.-P.; Hofmann, M.; Mario Hofmann | RSC Advances | 4 | 3 | |
2001 | Adjustable multilayer HTS filters | Chen, K.; Chen, M.-J.; Chen, J.-H.; Yang, H.-C.; Wang, L.-M.; Huang, C.-Y.; Wang, B.; LI-MIN WANG | IEEE Transactions on Applied Superconductivity | 5 | 4 | |
2006 | Advance in next century nano CMOSFET research and its future prospect for industry | Hwang, HL; Chiou, YK; Chang, CH; Wang, CC; Lee, KY; Wu, TB; Kwo, RN; Hong, MH; Chang-Liao, KS; Lu, CY; others; MINGHWEI HONG | 13 th International conference on Solid Films and Suefaces | | | |
2007 | Advance in next Century nanoCMOSFET research | Hwang, Huey-Liang; Chiou, Yan-Kai; Chang, Che-Hao; Wang, Chen-Chan; Lee, Kun-Yu; Wu, Tai-Bor; Kwo, Raynien; Hong, Minghwei; Chang-Liao, Kuei-Shu; Lu, Chun-Yuan; others; MINGHWEI HONG | Applied Surface Science | 2 | 2 | |
2006 | Advanced High K Dielectrics for Nano Electronics-Science and Technologies | Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG | ECS Transactions | | | |
2009 | Advances in biomagnetic research using high-T-c superconducting quantum interference devices | Yang, Hong-Chang; Horng, Herng-Er; Yang, S. Y.; Liao, Shu-Hsien | Superconductor Science & Technology | | | |
1999 | Advances in GaAs Mosfet's Using Ga 2 O 3 (Gd 2 O 3) as Gate Oxide | Wang, YC; Hong, M; Kuo, JM; Mannaerts, JP; Kwo, J; Tsai, HS; Krajewski, JJ; Weiner, JS; Chen, YK; Cho, AY; MINGHWEI HONG | MRS Proceedings | | | |
2003 | Advances in high $κ$ gate dielectrics for Si and III-V semiconductors | Kwo, J; Hong, M; Busch, B; Muller, DA; Chabal, YJ; Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG | Journal of Crystal Growth | | | |