https://scholars.lib.ntu.edu.tw/handle/123456789/321163
標題: | Effect of buffer layers on electrical, optical and structural properties of AlGaN/GaN heterostructures grown on Si | 作者: | CHI-TE LIANG YANG-FANG CHEN |
關鍵字: | 2DEG; AlGaN/GaN; Buffer layer; Defects; MOVPE; Si substrate | 公開日期: | 2006 | 卷: | 45 | 期: | 4 A | 起(迄)頁: | 2516-2518 | 來源出版物: | Japanese Journal of Applied Physics Part 1 | 摘要: | AlGaN/GaN heterostructures with different buffer layers were grown on Si substrates by metal-organic vapor phase epitaxy (MOVPE). The electrical property of the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface was correlated with both the optical and structural quality of the GaN layer involved. A combination of two sets of high-temperature and low-temperature AlN and an ultrashort exposure to SiH4 showed the best-grown GaN, followed by a similar buffer layer without the SiH4 exposure, and a graded AlGaN buffer layer only. The enhancements in both electron mobility and 2DEG density were also accompanied by a reduced donor-acceptor pair (DAP) emission and a reduced dislocation density in the top GaN grown. © 2006 The Japan Society of Applied Physics. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-33645694377&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/321163 |
ISSN: | 00214922 | DOI: | 10.1143/JJAP.45.2516 | SDG/關鍵字: | Dislocations (crystals); Electron mobility; Gallium nitride; Heterojunctions; Metallorganic vapor phase epitaxy; Optical properties; 2DEG; AlGaN/GaN; Buffer layers; Si substrate; Semiconducting aluminum compounds |
顯示於: | 物理學系 |
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