Enhancement of temperature sensitivity for metal-oxide-semiconductor (MOS) tunneling temperature sensors by utilizing hafnium oxide (HfO 2) film added on silicon dioxide (SiO 2)
Journal
IEEE Sensors Journal
Journal Volume
6
Journal Issue
6
Pages
1468-1472
Date Issued
2006
Author(s)
Abstract
In this paper, metal-oxide-semiconductor (MOS) capacitors fabricated on p-type silicon substrate with hafnium oxide (HfO 2 ) film added on silicon dioxide (SiO 2 ) were demonstrated as reliable temperature-detecting devices. The saturation current of MOS (p) capacitor with added HfO 2 film is easy to saturate within 0.5 V. From 40 degC to 90degC, each increase of 10degC almost doubles the saturation current. The C-V curves show that the interface properties of Si/SiO 2 and SiO 2 /HfO 2 are good. It was also shown that these devices are reliable even though they had been electrically stressed at various temperatures (30degC~90degC) for 15 000 s. They have the potential to be integrated into the circuits as temperature detectors in the era of ultralarge-scale-integration technology
Type
journal article