|Title:||Metal-oxide-semiconductor solar cells with silicon dioxide prepared by liquid-phase deposition method||Authors:||Shen, Y.-P.
|Issue Date:||1996||Journal Volume:||8||Journal Issue:||3||Start page/Pages:||420-421||Source:||IEEE Photonics Technology Letters||Abstract:||
In this study, a planar metal-oxide-semiconductor (MOS) solar cell with silicon dioxide prepared by liquid-phase deposition (LPD) method is proposed. The thickness of the insulating layer used is up to 220 Å. Although the thickness of the insulating layer is thick enough to prevent tunneling, photovoltaic characteristics are found. For a cell with an active area of 0.118 cm2 exposed under a 100 W bulb at 15 cm, short-circuit currents up to 0.164 mA are obtained. The fill factor is up to 71% and the open-circuit voltage is 0.35 V on average.
|DOI:||10.1109/68.481154||SDG/Keyword:||Boron; Current voltage characteristics; Deposition; Electric insulating materials; Electron tunneling; MOS devices; Photolithography; Photovoltaic effects; Short circuit currents; Silica; Silicon wafers; Substrates; Insulating layer; Liquid phase deposition; Photovoltaic characteristics; Solar cells
|Appears in Collections:||電機工程學系|
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