https://scholars.lib.ntu.edu.tw/handle/123456789/321882
標題: | Application of irradiation-then-nitridation to improve the radiation hardness in MOS gate dielectrics | 作者: | Lee, K.-C. JENN-GWO HWU |
公開日期: | 1996 | 卷: | 92 | 起(迄)頁: | 204-207 | 來源出版物: | Applied Surface Science | 摘要: | In this paper, the irradiation-then-nitridation (ITN) method was suggested to prepare oxynitrides. After 60 Co 1 Mrad irradiation, oxides were nitrided in N 2 O to become oxynitrides. They are more radiation hard than those nitrided in N 2 O directly. The difference can be explained by assuming that ITN process introduces more nitrogen Si0 2 /Si interfaces and hence improves radiation hardness. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0030562435&partnerID=MN8TOARS | DOI: | 10.1016/0169-4332(95)00230-8 | SDG/關鍵字: | Capacitors; Dielectric materials; Interfaces (materials); Irradiation; MOS devices; Nitriding; Nitrogen; Oxides; Radiation hardening; Semiconducting silicon; Semiconductor device manufacture; Silica; Irradiation then nitridation; MOS capacitors; Nitrided oxides; Oxynitrides; Radiation hardness; Nitrogen compounds |
顯示於: | 電機工程學系 |
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