Application of irradiation-then-nitridation to improve the radiation hardness in MOS gate dielectrics
Journal
Applied Surface Science
Journal Volume
92
Pages
204-207
Date Issued
1996
Author(s)
Lee, K.-C.
Abstract
In this paper, the irradiation-then-nitridation (ITN) method was suggested to prepare oxynitrides. After 60 Co 1 Mrad irradiation, oxides were nitrided in N 2 O to become oxynitrides. They are more radiation hard than those nitrided in N 2 O directly. The difference can be explained by assuming that ITN process introduces more nitrogen Si0 2 /Si interfaces and hence improves radiation hardness.
Other Subjects
Capacitors; Dielectric materials; Interfaces (materials); Irradiation; MOS devices; Nitriding; Nitrogen; Oxides; Radiation hardening; Semiconducting silicon; Semiconductor device manufacture; Silica; Irradiation then nitridation; MOS capacitors; Nitrided oxides; Oxynitrides; Radiation hardness; Nitrogen compounds
Type
journal article