Effect of interface traps related to mobile charges on silicon n-channel metal/oxide/semiconductor field effect transistors determined by a charge-temperature technique
Journal
Thin Solid Films
Journal Volume
142
Journal Issue
2
Pages
183-191
Date Issued
1986
Author(s)
Abstract
A new charge-temperature technique is proposed which permits control of the motion of mobile charges inside the gate oxide of metal/oxide/semiconductor field effect transistors (MOSFETs). It was shown that the transconductance of an n-channel MOSFET was increased (decreased) after the device was subjected to a negative (positive) charge-temperature treatment. A constant interface trap density model including the effect of mobility degradation due to interface traps and velocity saturation is developed to explain the experimental results. The interface trap density is increased with the number of mobile charges driven to the Si-SiO2 interface, whereas the concomitant degradation can be reduced by a suitable negative charge-temperature treatment. © 1986.
Other Subjects
SEMICONDUCTING SILICON; TRANSISTORS, FIELD EFFECT; CHARGE-TEMPERATURE TECHNIQUE; INTERFACE TRAPS; SEMICONDUCTOR DEVICES, MOS
Type
journal article