https://scholars.lib.ntu.edu.tw/handle/123456789/321885
標題: | Effect of interface traps related to mobile charges on silicon n-channel metal/oxide/semiconductor field effect transistors determined by a charge-temperature technique | 作者: | Lin, C.M. Wang, W.S. JENN-GWO HWU |
公開日期: | 1986 | 卷: | 142 | 期: | 2 | 起(迄)頁: | 183-191 | 來源出版物: | Thin Solid Films | 摘要: | A new charge-temperature technique is proposed which permits control of the motion of mobile charges inside the gate oxide of metal/oxide/semiconductor field effect transistors (MOSFETs). It was shown that the transconductance of an n-channel MOSFET was increased (decreased) after the device was subjected to a negative (positive) charge-temperature treatment. A constant interface trap density model including the effect of mobility degradation due to interface traps and velocity saturation is developed to explain the experimental results. The interface trap density is increased with the number of mobile charges driven to the Si-SiO2 interface, whereas the concomitant degradation can be reduced by a suitable negative charge-temperature treatment. © 1986. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0022775209&doi=10.1016%2f0040-6090%2886%2990003-9&partnerID=40&md5=b7982ec1cfce83492d34b98885cea81c | DOI: | 10.1016/0040-6090(86)90003-9 | SDG/關鍵字: | SEMICONDUCTING SILICON; TRANSISTORS, FIELD EFFECT; CHARGE-TEMPERATURE TECHNIQUE; INTERFACE TRAPS; SEMICONDUCTOR DEVICES, MOS |
顯示於: | 電機工程學系 |
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