https://scholars.lib.ntu.edu.tw/handle/123456789/322222
標題: | Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition | 作者: | Feng, Z.C. Liu, W. Chua, S.J. Yu, J.W. CHIH-CHUNG YANG Yang, T.R. Zhao, J. |
關鍵字: | Characterization; Crystal structure; GaN; InGaN; Metalorganic chemical vapor deposition; MOCVD; Nitrides; Phase separation; Photoluminescence; Segregation | 公開日期: | 2006 | 卷: | 498 | 期: | 1-2 | 起(迄)頁: | 118-122 | 來源出版物: | Thin Solid Films | 摘要: | The wavelength shifts in the photoluminescence (PL) from low indium composition (∼ 3%) InGaN epitaxial thin films, grown on sapphire substrates by metalorganic chemical vapour deposition, has been studied by a combination of experiment and theory. As temperature increases from 6 K, the PL peak energy red-shifts very slightly first, then blue-shifts to reach a maximum at near 100 K, and red-shifts again till room temperature. This unique PL behaviour, indicating the existence of the phase separation, is interpreted qualitatively from the spatial variation of band structure due to the In-compositional fluctuation. Theoretical calculation, based upon a model involving the band-tail states in the radiative recombination, explains the experimental data successfully. © 2005 Elsevier B.V. All rights reserved. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-30944444165&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/322222 https://www.scopus.com/inward/record.uri?eid=2-s2.0-30944444165&doi=10.1016%2fj.tsf.2005.07.087&partnerID=40&md5=112176a5a44956a28264cf4ce1d215b6 |
ISSN: | 00406090 | DOI: | 10.1016/j.tsf.2005.07.087 | SDG/關鍵字: | Band structure; Crystal structure; Gallium nitride; Metallorganic chemical vapor deposition; Nitrides; Phase separation; Photoluminescence; Sapphire; Temperature measurement; Thin films; PL behavior; Radiative recombination; Segregation; Spatial variation; Semiconducting indium compounds |
顯示於: | 電機工程學系 |
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