https://scholars.lib.ntu.edu.tw/handle/123456789/322236
標題: | Depth dependence of optical property beyond the critical thickness of an InGaN film | 作者: | Teng, C.-C. Wang, H.-C. Tang, T.-Y. Lu, Y.-C. Cheng, Y.-C. CHIH-CHUNG YANG Ma, K.-J. Wang, W.-M. Hsu, C.-W. LI-CHYONG CHEN |
關鍵字: | A1. Segregation; B1. Nitride; B3. Light-emitting diodes | 公開日期: | 2006 | 卷: | 288 | 期: | 1 | 起(迄)頁: | 18-22 | 來源出版物: | Journal of Crystal Growth | 摘要: | We study the depth-dependent variation of optical property beyond the critical thickness in an InGaN thin film. In the sample, both free-carrier and localized-state recombination activities are observed. The emission peak corresponding to the localized states in photoluminescence (PL) measurement becomes more prominent with increasing sample depth, implying stronger clustering in the deeper layers. Although the PL spectral peak variation is weak, that of cathodoluminescence (CL), corresponding to the activities of the localized states, shows a clear red shift trend with depth. The red shift trend is attributed to the stronger clustering behavior and possibly stronger quantum-confined Stark effect in the nano-clusters, which is due to the residual strain beyond the critical thickness, in a deeper layer. © 2005 Elsevier B.V. All rights reserved. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-31644438017&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/322236 https://www.scopus.com/inward/record.uri?eid=2-s2.0-31644438017&doi=10.1016%2fj.jcrysgro.2005.12.012&partnerID=40&md5=762977b4fffdf4b7c0849dafbcc03286 |
ISSN: | 00220248 | DOI: | 10.1016/j.jcrysgro.2005.12.012 | SDG/關鍵字: | Electromagnetic wave emission; Light emitting diodes; Nanostructured materials; Nitrides; Optical films; Optical properties; Photoluminescence; Segregation (metallography); Critical thickness; Nano-clusters; Quantum-confined Stark effect; Residual strain; Semiconducting indium compounds |
顯示於: | 電機工程學系 |
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