An analysis of base bias current and intrinsic base resistance effects on InP-InGaAs, InGaP-GaAs, and SiGe heterojunction bipolar transistors

Journal

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Journal Volume

45

Journal Issue

5 A

Pages

3949-3954

Date Issued

2006

Author(s)

Lin, Y.-S.

Chen, C.-C.

DOI

URI

Type

journal article