Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy

Detailed studies are reported on the photoluminescence of InAsSbInAs multiple quantum wells grown by molecular beam epitaxy on InAs substrates with the Sb mole fraction ranging from 0.06 to 0.13. From 4 K photoluminescence the band alignment was determined to be staggered type II. By comparing the emission peak energies with a transition energy calculation it was found that both the conduction and valence bands of InAsSb alloy exhibit some bowing. The bowing parameters were determined to be in the ratio of 4:6. For a sample with Sb composition ∼0.12 in the quantum well the photoluminescence emission band covers the C O2 absorption peak making it suitable for use in sources for C O2 detection. © 2006 American Institute of Physics.