Photoconductivity and highly selective ultraviolet sensing features of amorphous silicon carbon nitride thin films
Resource
Applied Physics Letters 88 (7): 073515
Journal
Applied Physics Letters
Journal Volume
88
Journal Issue
7
Pages
073515-1 - 073515-3
Date Issued
2006
Author(s)
Chen, C.-W.
Huang, C.-C.
Lin, Y.-Y.
Su, W.-F.
Chen, L.-C.
Chen, K.-H.
Abstract
Photoconductivity of amorphous silicon carbon nitride (a-SiCN) as a function of incident photon energies has been studied. A metal-semiconductor- metal photodetector device based on the a-SiCN thin film demonstrates excellent selective ultraviolet sensing features. A large photo-to-dark current ratio about 5000 and a relative quantum efficiency about ∼ 105 under illumination of the 250 nm light source and a bias voltage of 5 V were observed. A model based on the heterogeneous structure in the a-SiCN thin film which consists of π - π* bands and σ- σ* bands was introduced to account for the observed photoconductive transport properties. © 2006 American Institute of Physics.
Publisher
American Institute of Physics
Type
journal article