Demonstration of Rashba spin splitting in an Al0.25Ga 0.75N/GaN heterostructure by microwave-modulated Shubnikov-de Haas oscillations
Journal
Semiconductor Science and Technology
Journal Volume
22
Journal Issue
8
Pages
870-874
Date Issued
2007
Author(s)
Abstract
We report zero-field spin splitting using both conventional and microwave-modulated Shubnikov-de Hass (SdH) oscillations in an Al 0.25Ga0.75N/GaN heterostructure. By studying the apparent beating pattern in SdH oscillations, we are able to measure the spin splitting parameter α. In addition, the persistent photoconductivity effect allows us to increase the carrier concentration in our AlGaN/GaN two-dimensional electron system and vary α. With our microwave-modulation technique, we suggest that a sizeable Rashba type of spin splitting is present in AlGaN/GaN heterostructures. © 2007 IOP Publishing Ltd.
Type
journal article