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College of Science / 理學院
Physics / 物理學系
Growth of ternary silicon carbon nitride as a new wide bandgap material
Details
Growth of ternary silicon carbon nitride as a new wide bandgap material
Journal
Materials Research Society Symposium - Proceedings
Journal Volume
468
Pages
31-37
Date Issued
1997
Author(s)
YANG-FANG CHEN
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-0030688772&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/329238
Type
conference paper