An explanation of optically induced excess conductivity in compensated a-Si:H films
Journal
Journal of Applied Physics
Journal Volume
62
Journal Issue
6
Pages
2578-2579
Date Issued
1987
Author(s)
Abstract
In order to explore the creation process of optically induced excess conductivity in compensated a-Si:H films, we investigated the effect of monochromatic light exposure with different photon energies: 2.54, 1.96, 1.17, and 0.95 eV. The experimental results show that the threshold energy is below 0.95 eV. We suggest that the most likely explanation is the introduction of localized states originating from boron-phosphorus complexes.
SDGs
Type
journal article